lanthanum hafnium layer

Hafnium layer help create multilayered ultrasensitive ...

Peng et al. created an ultrasensitive film by sandwiching a thin layer of hafnium between other commonly used ferromagnetic materials, in the arrangement of MgO/CoFeB/Hf/Ta/MgO. Their results showed that the hafnium layer raised the sensitivity of the sample by 560%, and by 883% when the sample was annealed.

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric ...

Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimental results for lanthanum and gadolinium showing the highest remanent polarization values of all hafnia-based ferroelectric films until now.

Hafnium dioxide - Wikipedia

Hafnium(IV) oxide is the inorganic compound with the formula Hf O 2.Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium …

ATOMIC LAYER DEPOSITION OF HAFNIUM LANTHANUM OXIDES

Apr 27, 2009· There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with ...

Raman Spectra of High-κ Dielectric Layers Investigated ...

The structure of following layers: SiO 2, HfO 2 as-deposited and HfO 2 annealed at 400 °C seems to be similar to densified bulk silicon dioxide. The intensity of Raman scattering generated by hafnium oxide, lanthanum-lutetium oxide, and gadolinium-silicon oxide layers is 2-3 times higher than scattering from silicon oxide layer.

Reactions of High-k Gate Dielectrics: Studies in Hafnium ...

Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition

US20060128168A1 - Atomic layer deposited lanthanum hafnium ...

Atomic layer deposited dielectric layers containing a lanthanum hafnium oxide layer and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices. In an embodiment, a lanthanum hafnium oxide layer is formed by depositing hafnium and lanthanum by atomic layer deposition onto a substrate surface.

Woongsun Kim - NCSU Laboratory for Electronics in Advanced ...

WS Kim, TS Kim, BW Kang, MG Ko, SK Park, JW Park, "Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26 (4) 1588-1591, 2008

Solution-processed amorphous hafnium-lanthanum oxide gate ...

Solution-processed high-K dielectrics for oxide thin-film transistors (TFTs) have been widely studied with the objective of achieving high performance and low-cost TFTs for next-generation displays. In this study, we introduce an amorphous hafnium-lanthanum oxide (HfLaOx) gate insulator with high electrical

Reactions of High-k Gate Dielectrics: Studies in Hafnium ...

Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition. (Under the direction of Dr. Gregory N. Parsons.) According to the International Technology Roadmap for Semiconductors (2004)

Materials for Every Layer - ACI ALLOYS, INC

ACI Alloys Inc. offers thin film and PVD materials designed for a variety of uses. Our broad range of products includes ceramics, precious metals to support all …

Hafnium - Wikipedia

Hafnium is a chemical element with the symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium and is found in many zirconium minerals.Its existence was predicted by Dmitri Mendeleev in 1869, though it was not identified until 1923, by Coster and Hevesy, making it the last stable element to be discovered.

LOAN t L) KIRTLAND AFB, N. Nt - NASA

afw t (dou l) kirtland afb, n. nt exploratory investigation of yttrium, lanthanum, and hafnium coatings for nitridation protection of chromium alloys by joseph r. stephens lewis reseurch center clevehnd, ohio 44135 national aeronautics and space administration washington, d. c. october 1971 i

Thermal stability of lanthanum in hafnium-based gate stacks

The stoichiometry and distribution of the HfO2 and SiO2 layers was examined using a self-consistent ARXPS analysis. This study shows that La diffuses to the SiO2/HfO2 interface, and that subsequent rapid thermal annealing at 1000 °C for 5 s does not significantly change the La distribution.

Atomic layer deposition of lanthanum oxide with ...

Aug 30, 2018· Lanthanum oxide La 2 O 3 is an interesting material for microelectronic applications due to its high permittivity (~27 for hexagonal La 2 O 3) and wide band gap (~5.5 eV) . It has been studied as a gate dielectric on several semiconductors on its own [,, ] or combined with other oxides such as hafnium or yttrium oxide [6, 7].

The impact of lanthanum hafnium oxide as a gate insulator ...

The impact of lanthanum hafnium oxide as a gate insulator on the performance of zinc oxide thin film transistors 667 which the dielectric constants of La2O3 and HfO2 are lower than other reports, is due to the La-silicate and Hf-

Thermal stability of lanthanum in hafnium-based gate stacks

Thermal stability of lanthanum in hafnium-based gate stacks ... the hafnium layer toward the hafnium layer interface with 2. The RTA increases the SiO 2 layer thickness but the La

Kurt J. Lesker Company | Hafnium Oxide HfO2 Pellets ...

Hafnium Oxide HfO2 Pellets & Tablets Evaporation Materials. Thermal Evaporation of Hafnium Oxide (HfO 2). Hafnium oxide can be thermally evaporated from a tungsten boat such as our EVS8B005W, if using a KJLC ® system. We estimate a deposition rate of 5 angstroms per second when the evaporation temperature is at ~2,500°C.

Atomic Layer Deposition of Lanthanum Stabilized Amorphous ...

Hafnium dioxide deposited on n-Si(100) by atomic layer deposition (ALD) was incorporated with La2O3 to stabilize the amorphous phase during high-temperature annealing. The incorporation of La was achieved by depositing HfO2 and La2O3 in different ALD cycles that likely produced a HfO2−HfLaxOy periodic structure. X-ray photoelectron spectroscopy compositional analysis shows that the Hf and La ...

Thermal stability of lanthanum scandate dielectrics on Si(100)

stituents with a higher mobility channel layer, a higher-k gate dielectric, and a metal gate electrode.1 For near term gate dielectric implementation in the year 2008,1 hafnium sili-cates with optimized nitrogen content have been proposed. Group III or rare earth oxides and lanthanum based ternary oxides have been identified as candidates for ...

DIELECTRIC STACK CONTAINING LANTHANUM AND HAFNIUM …

Feb 05, 2009· Dielectric layers containing a dielectric layer including lanthanum and hafnium and methods of fabricating such dielectric layers provide an insulating layer in …

Characteristics of high-k dielectric ECR-ALD lanthanum ...

May 29, 2009· In this study, we investigated the characteristics of various lanthanum hafnium oxide (LHO) films with different lanthanum (La) concentrations deposited by an electron cyclotron resonance plasma-enhanced atomic layer deposition (ECR-ALD).

| | | LabXing

Jinlong Gong was born in Lanzhou, Gansu Province. He received B.S. (2001) and M.S. (2004) degrees from Tianjin University and a Ph.D. (2008) degree from the University of Texas at Austin (with C. B. Mullins), all in chemical engineering.

Preparation of Lanthanum Oxide and Lanthanum Oxycarbonate ...

Layers of lanthanum oxide and lanthanum oxycarbonate were prepared on titanium by electrodeposition with organic solution. Four voltages ranging from 200 to 1000 V were applied for the electrodeposition at three concentrations of lanthanum ions. The organic solution was isobutanol and titanium foils were used as anodes and cathodes.

Hafnium - Periodic Table of Elements and Chemistry

Hafnium tetraiodide (HfI 4) is decomposed on a white hot tungsten filament creating a crystal bar of pure hafnium. This is known as the crystal bar process. The element was called Hafnium after the Latin name 'Hafnia,' meaning Copenhagen, the city where the element was discovered.

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides Hongtao Wang,a Jun-Jieh Wang,b Roy Gordon,b,*,z Jean-Sébastien M. Lehn,c Huazhi Li,c Daewon Hong,c and Deo V. Shenaic aSchool of Applied Science and Engineering and bDepartment of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA cRohm and Haas Electronic Materials, North …

US Patent for Atomic layer deposition of hafnium lanthanum ...

Apr 27, 2009· There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with ...

The Scientific World Journal - Hindawi Publishing Corporation

Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the ...

Publications | Ekerdt Research Group

Atomic layer deposition growth of hafnium-lanthanum oxide nanolaminate films to stabilize the amorphous phase (Tuo Wang, J. G. Ekerdt), Chemistry of Materials 21, 3096-3101 (2009). NANOLAB at The University of Texas at Austin: A Model for Interdisciplinary Undergraduate Science and Engineering Education (A. T. Heitsch, J. G. Ekerdt, B. A ...

Atomic Layer Deposition of Lanthanum Stabilized Amorphous ...

Download Citation on ResearchGate | Atomic Layer Deposition of Lanthanum Stabilized Amorphous Hafnium Oxide Thin Films | Hafnium dioxide deposited on n-Si(100) by atomic layer …

TEMAHf CAS# 352535-01-4, Plasma Enhanced Atomic Layer ...

Plasma Enhanced Atomic Layer Deposition publications using TEMAHf, CAS# 352535-01-4. ... Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films ... Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation: 43:

US8071452B2 - Atomic layer deposition of hafnium lanthanum ...

There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with ...

Characteristics of lanthanum hafnium oxide deposited by ...

Aug 13, 2008· Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition